PART |
Description |
Maker |
ASIS50-28 |
NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator HF BAND, Si, NPN, RF POWER TRANSISTOR
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ASI[Advanced Semiconductor] Advanced Semiconductor, Inc. ADVANCED SEMICONDUCTOR INC
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2SA1010 2SA1010-AZ 2SA10102 |
Silicon transistor SILICON POWER TRANSISTOR 7 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB SC-46, 3 PIN
|
NEC[NEC]
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MJE240 MJE243 MJE252 MJE254 MJE241 MJE242 MJE244 M |
Leaded Power Transistor General Purpose COMPLEMENTARY SILICON POWER TRANSISTORS 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-126 (MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS From old datasheet system
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Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp] http://
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2SA1843 2SA1843M 2SA1843L |
Silicon power transistor PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 5A条一(c)|园区
|
NEC Corp.
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D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS From old datasheet system
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] http://
|
2SB1431 |
Silicon power transistor From old datasheet system PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
BUV21 BUV21_D ON0257 |
From old datasheet system 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS SITCHMODE Series NPN Silicon Power Transistor
|
Motorola, Inc. ON Semiconductor
|
BUV11 |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS SITCHMODE Series NPN Silicon Power Transistor
|
Motorola Inc Motorola, Inc. MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
|
STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840 NPN Silicon Power Transistor
|
AUK, Corp. AUK[AUK corp]
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2SB624 2SB624-T1B 2SB624-L 2SB624-T2B 2SB624BV3 |
BJT 双极型晶体管 AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD Silicon transistor
|
NEC, Corp. NEC[NEC] Weitron Technology
|
MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
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Toshiba Semiconductor Toshiba Corporation
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